On the Possibility of Obtaining MOSFET-Like Performance and Sub-60-mV/dec Swing in 1-D Broken-Gap Tunnel TransistorsKOSWATTA, Siyuranga O; KOESTER, Steven J; HAENSCH, Wilfried et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 12, pp 3222-3230, issn 0018-9383, 9 p.Article

Effects of Substrate Orientation and Channel Stress on Short-Channel Thin SOI MOSFETsMAJUMDAR, Amian; OUYANG, Christine; KOESTER, Steven J et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 9, pp 2067-2072, issn 0018-9383, 6 p.Article

Undoped-Body Extremely Thin SOI MOSFETs With Back GatesMAJUMDAR, Amlan; ZHIBIN REN; KOESTER, Steven J et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 10, pp 2270-2276, issn 0018-9383, 7 p.Article

Band-edge electronic structures, and pre-existing defects in remote plasma deposited (RPD) non-crystalline (nc-) SiO₂ and GeO₂LUCOVSKY, Gerald.Solid-state electronics. 2013, Vol 83, pp 30-36, issn 0038-1101, 7 p.Conference Paper

Fabrication of bonded GeOI substrates with thin Al₂O₃/SiO₂ buried oxide layersMORIYAMA, Yoshihiko; IKEDA, Keiji; KAMIMUTA, Yuuichi et al.Solid-state electronics. 2013, Vol 83, pp 42-45, issn 0038-1101, 4 p.Conference Paper

n―Si―p-Si_1―xGe_x nanowire arrays for thermoelectric power generationBIN XU; CHUANBO LI; MYRONOV, Maksym et al.Solid-state electronics. 2013, Vol 83, pp 107-112, issn 0038-1101, 6 p.Conference Paper

Multifunctional Graphene Optical Modulator and Photodetector Integrated on Silicon WaveguidesYOUNGBLOOD, Nathan; ANUGRAH, Yoska; RUI MA et al.Nano letters (Print). 2014, Vol 14, Num 5, pp 2741-2746, issn 1530-6984, 6 p.Article

Ge quantum well optoelectronic devices for light modulation, detection, and emissionCHAISAKUL, P; MARRIS-MORINI, D; ISELLA, G et al.Solid-state electronics. 2013, Vol 83, pp 92-98, issn 0038-1101, 7 p.Conference Paper

Morphology evolution of epitaxial SiGe and Si in patternsSEISS, Birgit; DUTARTRE, Didier.Solid-state electronics. 2013, Vol 83, pp 18-24, issn 0038-1101, 7 p.Conference Paper

Strained germanium―tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivationLANXIANG WANG; SHAOJIAN SU; YEO, Yee-Chia et al.Solid-state electronics. 2013, Vol 83, pp 66-70, issn 0038-1101, 5 p.Conference Paper

Low-Power Circuit Analysis and Design Based on Heterojunction Tunneling Transistors (HETTs)YOONMYUNG LEE; DAEYEON KIM; JIN CAI et al.IEEE transactions on very large scale integration (VLSI) systems. 2013, Vol 21, Num 9, pp 1632-1643, issn 1063-8210, 12 p.Article

Characterization of anisotropic strain relaxation after isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman methodUSUDA, Koji; TEZUKA, Tsutomu; KOSEMURA, Daisuke et al.Solid-state electronics. 2013, Vol 83, pp 46-49, issn 0038-1101, 4 p.Conference Paper

Development of epitaxial growth technology for Ge_1―xSn_x alloy and study of its properties for Ge nanoelectronicsNAKATSUKA, Osamu; SHIMURA, Yosuke; TAKEUCHI, Wakana et al.Solid-state electronics. 2013, Vol 83, pp 82-86, issn 0038-1101, 5 p.Conference Paper

Phosphorus atomic layer doping in Ge using RPCVDYAMAMOTO, Yuji; KURPS, Rainer; MAI, Christian et al.Solid-state electronics. 2013, Vol 83, pp 25-29, issn 0038-1101, 5 p.Conference Paper

The SiGeSn approach towards Si-based lasersSUN, G; YU, S.-Q.Solid-state electronics. 2013, Vol 83, pp 76-81, issn 0038-1101, 6 p.Conference Paper

Analysis of USJ formation with combined RTA/laser annealing conditions for 28 nm high-k/metal gate CMOS technology using advanced TCAD for process and device simulationBAZIZI, E. M; ZAKA, A; BENISTANT, F et al.Solid-state electronics. 2013, Vol 83, pp 61-65, issn 0038-1101, 5 p.Conference Paper

Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction Tunnel-FETsVANDOOREN, A; LEONELLI, D; ROOYACKERS, R et al.Solid-state electronics. 2013, Vol 83, pp 50-55, issn 0038-1101, 6 p.Conference Paper

Room-temperature electroluminescence from tensile strained double-heterojunction Germanium pin LEDs on Silicon substratesKASCHEL, Mathias; SCHMID, Marc; GOLLHOFER, Martin et al.Solid-state electronics. 2013, Vol 83, pp 87-91, issn 0038-1101, 5 p.Conference Paper

Terahertz imaging using strained-Si MODFETs as sensorsMEZIANI, Y. M; GARCIA-GARCIA, E; VELAZQUEZ-PEREZ, J. E et al.Solid-state electronics. 2013, Vol 83, pp 113-117, issn 0038-1101, 5 p.Conference Paper

Practical Strategies for Power-Efficient Computing Technologies : CIRCUIT TECHNOLOGY FOR ULTRA-LOW POWER (ULP)CHANG, Leland; FRANK, David J; MONTOYE, Robert K et al.Proceedings of the IEEE. 2010, Vol 98, Num 2, pp 215-236, issn 0018-9219, 22 p.Article

Charge carrier traffic at self-assembled Ge quantum dots on SiKANIEWSKA, M; ENGSTRÖM, O; KARMOUS, A et al.Solid-state electronics. 2013, Vol 83, pp 99-106, issn 0038-1101, 8 p.Conference Paper

Effect of gate metal on chemical bonding state in metal/Pr-oxide/Ge gate stack structureKATO, Kimihiko; SAKASHITA, Mitsuo; TAKEUCHI, Wakana et al.Solid-state electronics. 2013, Vol 83, pp 56-60, issn 0038-1101, 5 p.Conference Paper

Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drainsHARTMANN, J. M; BENEVENT, V; DUTARTRE, D et al.Solid-state electronics. 2013, Vol 83, pp 10-17, issn 0038-1101, 8 p.Conference Paper

Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallizationYINJIE DING; RAN CHENG; QIAN ZHOU et al.Solid-state electronics. 2013, Vol 83, pp 37-41, issn 0038-1101, 5 p.Conference Paper

Mobility Scaling in Short-Channel Length Strained Ge-on-Insulator P-MOSFETsBEDELL, Stephen W; MAJUMDAR, Amlan; OTT, John A et al.IEEE electron device letters. 2008, Vol 29, Num 7, pp 808-810, issn 0741-3106, 3 p.Article